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Amplifier, Power, 5W 4.8-6.7 GHz
Features
5 Watt Saturated Output Power Level Variable Drain Voltage (6-10V) Operation MSAG Process
MAAPGM0060-DIE
903186 -- Preliminary Information
Description
The MAAPGM0060-DIE is a 2-stage, 5 W power amplifier with on-chip bias networks. This produ ct is fully match ed to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG) Process. This process provides polyimide scratch protection.
Primary Applications
Point-to-Point Radio SatCom Broadband Wireless Access
Electrical Characteristics: TB = 40C1, Z0 = 50 , VDD = 8V, Idq 1.8A2, Pin = 20 dBm, Rg = 100
Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current 1. 2. TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.5V to achieve specified Idq. Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD Typical 4.8-6.7 37 29 37 18 3.0:1 1.5:1 <4 < 2.5 mA A Units GHz dBm % dBm dB
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 5W 4.8-6.7 GHz
Maximum Operating Conditionss3
Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 25.0 +12.0 -3.0 3 27 180 -55 to +150
MAAPGM0060-DIE
903186 -- Preliminary Information
Units dBm V V A W C C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Symbol VDD VGG PIN Min 6.0 -2.6 Typ 8.0 -1.8 20.0 Max 10.0 -1.5 23.0 150 3.7 Note 5 Unit V V dBm C C/W C
Junction Temperature TJ 2. Voltage Levels valid from -60C to +180 Base Temperature. Thermal Resistance JC Package Base Temperature 4. 5. TB
Operation outside of these ranges may reduce product reliability. Maximum MMIC Base Temperature = 150C -- JC * VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.0 V, VDD = 0 V. 2. Ramp VDD to desired voltage of 8 V. 3. Set RF input. 4. Power down sequence in reverse. Turn VGG off last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 5W 4.8-6.7 GHz
40 38 36 34 POUT PAE 40
40
MAAPGM0060-DIE
903186 -- Preliminary Information
50
50
POUT (dBm)
P1dB (dBm)
30 28 26 24 22 20 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20
PAE(%)
32
30
30
20
VDD = 6 VDD = 8
10
VDD = 10
0 4.5 5.0 5.5 6.0 6.5 7.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 20 dBm
Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage
50
3.0
40
2.5
2.0
POUT (dBm)
IDS (A)
30
1.5 5.0 GHz 5.5 GHz 6.5 GHz 0.5
20
5.0 GHz 1.0 5.5 GHz 6.5 GHz
10
0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24
0.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24
PIN (dBm) Figure 3. Output Power vs. Input Power at VDD = 8V
50 POUT PAE 40 40 50
Input Power (dBm)
Figure 4. Drain Current vs. Input Power at VDD = 8V
30 Gain Input VSWR Output VSWR 25 5 6
POUT (dBm)
Gain (dB)
PAE(%)
30
30
20
4
20
20
15
3
10
10
10
2
0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
0 10.0
5 4.5 5.0 5.5 6.0 6.5 7.0 Frequency (GHz)
1
Drain Voltage (volts) Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 6 GHz
Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
VSWR
Amplifier, Power, 5W 4.8-6.7 GHz Mechanical Information
Chip Size: 4.170 x 4.170 x 0.075 mm
MAAPGM0060-DIE
903186 -- Preliminary Information
(163 x 163 x 3 mils)
Figure 7. Die Layout
Bond Pad Dimensions
Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 150 200 x 150 150 x 150 Size (mils) 4x6 8x6 6x6
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 5W 4.8-6.7 GHz
Assembly and Bonding Diagram
MAAPGM0060-DIE
903186 -- Preliminary Information
100 pF
100 pF
100 pF
RFIN
RFOUT
VGG
100 0.1 F
100 pF
100 pF
100 pF
0.1 F
VDD
Figure 8. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.

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